Plasma Temperature Process Oven RTP-300

  • Brand:德國UNITEMP
  • Fast ramp up heating of substrates and wafers parallel with plasma cleaning, Special surface treatment for wafers or substrates, Fluxless soldering, Flip chip process, Adhesive bonding, Solder bump reflow, Soldering of power devices, Prototype development
  • A major advantage is that low pressure plasma can readily penetrate crevices. Even intricately shaped parts can be easily cleaned or etched in a plasma, because the gas can penetrate hollow spaces which can not be reached by liquids.
  • Key features are precise controlled fast ramp-up and ramp-down rates.
  • The heating is done by Infrared lamps with one heating zone at the chamber base.
  • The vacuum coupling on the backside allows the connection of a vacuum pump system.
  • Two gas lines with Mass Flow Controllers and magnetic valve are default.

Specification

ModelRTP-300
Loading area305 × 305 × 25 mm
Chamber materialAluminium (optional: Quartz glass chamber)
Temperature Rangeup to 650 °C
Heating24 IR Lamps (18 kW) and 2 Mass Flow Controllers
CoolingWater cooling required
Microwave generatorfor plasma cleaning or removal of oxyde resists 2.45 GHz, max. 600 W, stepless from 100 W to 600 W
Dimension600 × 1850 × 880 mm
Weight150-200 kg (depends on acessories)
Power Supply3P/N/PE,AC 230/400V,50/60 Hz,3×32 A,18 kW

Option

ItemDescription
PTP-ALAutomatic Loading
PTP-MFCMass Flow Controller
PTP-RVPDouble stage rotary vane pump for vacuum up to 10-3mbar
PTP-HVPTurbomolecular pump with gate valve and Pirani gauge for vacuum up to 10-6mbar
PTP-WCClosed loop water cooling system

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